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参数资料
| 型号： | 2SK3844 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 247K |
| 代理商： | 2SK3844 |
2SK3844
2006-11-17
3
ID – VDS
D
ra
in
cu
rr
ent
I
D
(
A
)
Drain
source voltage VDS (V)
0
50
10
30
20
40
0
0.2
1.0
0.4
0.6
0.8
10
8
7 6
5.5
5.2
5
4.8
VGS = 4.5 V
Common source
Tc
= 25°C
Pulse test
ID – VDS
D
ra
in
cu
rr
ent
I
D
(
A
)
Drain
source voltage VDS (V)
0
100
20
60
40
80
0.4
0
2.0
0.8
1.2
1.6
10
8
7
6
5.7
5.5
5.2
5
4.8
VGS = 4.5 V
Common Source
Tc
= 25°C
Pulse test
ID – VGS
D
ra
in
cu
rr
ent
I
D
(A)
Gate
source voltage VGS (V)
0
50
10
30
20
40
2
0
8
46
100
25
Tc
= 55°C
Common source
VDS = 20 V
Pulse test
VDS – VGS
Dr
ai
n
sour
ce
v
ol
tag
e
V
DS
(
V
)
Gate
source voltage VGS (V)
0
1.0
0.2
0.6
0.4
0.8
4
0
20
812
16
45
23
ID = 11 A
Common source
Tc
= 25°C
Pulse test
Yfs ID
F
or
w
ard
tr
an
sf
er
ad
m
itt
anc
e
Y
fs
(
S
)
Drain current ID (A)
1
1000
100
10
1
100
10
Common source
VDS = 20 V
Pulse test
Tc
= 55°C
25
100
RDS (ON) ID
Dr
ai
n
sour
ce
O
N
r
es
is
tanc
e
R
DS
(O
N)
(
m
)
Drain current ID (A)
1
10
100
1
10
100
VGS = 10, 15 V
Common source
Tc
= 25°C
Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3847-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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