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参数资料
| 型号： | 2SK3844 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 247K |
| 代理商： | 2SK3844 |
2SK3844
2006-11-17
4
RDS (ON) Tc
Dr
ai
n
so
ur
ce
O
N
r
es
is
ta
nc
e
R
DS
(O
N)
(
m
)
Case temperature Tc (°C)
0
10
2
6
4
8
40
80
160
0
40
120
80
Common source
VGS = 10 V
Pulse test
ID = 45 A
23
11
IDR VDS
D
rain
re
ve
rs
e
cu
rr
ent
I DR
(
A
)
Drain
source voltage VDS (V)
1
100
10
0.2
0
1.2
0.6
0.4
0.8
1.0
Common source
Tc
= 25°C
Pulse test
10
5
3
1
VGS = 0 V
Case temperature Tc (°C)
PD Tc
D
rain
po
w
er
di
ss
ip
at
ion
P
D
(
W
)
50
10
30
20
40
0
80
160
40
120
Vth Tc
Gat
et
hre
shold
vo
ltage
V
th
(V)
Case temperature Tc (°C)
0
80
0
40
80
120
160
40
5
1
3
2
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
C
apac
ita
nc
e
C
(p
F
)
Capacitance – VDS
Drain
source voltage VDS (V)
100
1000
10000
100000
0.1
1
10
100
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
Dr
ai
n
so
ur
ce
vo
lta
ge
V
DS
(
V
)
Dynamic input/output characteristics
Gat
e
sourc
ev
olt
age
V
GS
(
V
)
Total gate charge Qg (nC)
50
40
0
30
20
10
0
240
320
160
80
10
5
20
25
0
15
VGS
VDS
VDD = 12 V
48V
24V
Common source
ID = 45 A
Tc
= 25°C
Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3847-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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