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参数资料
| 型号： | 2SK3993-ZK-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V MP-3ZK/TO-252 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 64A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.8 毫欧 @ 32A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 88nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4770pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3Z） |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3993
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
The 2SK3993 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
? Low on-state resistance
R DS(on)1 = 3.8 m Ω MAX. (V GS = 10 V, I D = 32 A)
? Low C iss : C iss = 4770 pF TYP.
? 5 V drive available
PART NUMBER
2SK3993
2SK3993-ZK
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3ZK)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V) V DSS
25
V
(TO-252)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V GSS
I D(DC)
±20
±64
V
A
Drain Current (pulse)
Note1
I D(pulse)
±256
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
40
1.0
150
? 55 to +150
W
W
°C
°C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
41
168
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, V DD = 12.5 V, R G = 25 Ω , V GS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17322EJ2V0DS00 (2nd edition)
Date Published September 2005 NS CP(K)
The mark
shows major revised points.
Printed in Japan
2004
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3993-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel |
| 2SK3993-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3994(Q) | 制造商:Toshiba 功能描述:Nch 250V 20A 0.105@10V TO220NIS Bulk |
| 2SK3994(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 20A TO220NIS |
| 2SK40 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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