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| 型号： | 2SK4124 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 20A TO-3PB |
| 产品目录绘图： | TO-3PB Package N-Channel Top |
| 标准包装： | 100 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 430 毫欧 @ 8A，10V |
| 闸电荷(Qg) @ Vgs： | 46.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 30V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PB |
| 包装： | 托盘 |
| 产品目录页面： | 1537 (CN2011-ZH PDF) |
| 其它名称： | 869-1070 |
Ordering number : ENA0746C
2SK4124
N-Channel Power MOSFET
500V, 20A, 430m Ω , TO-3P-3L
Features
http://onsemi.com
?
?
?
Low ON-resistance, low input capacitance, ultrahigh-speed switching
Adoption of high reliability HVP process
Avalanche resistance guarantee
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
500
±30
20
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C (Our ideal heat dissipation condition)*1
60
2.5
170
150
--55 to +150
110
20
A
W
W
°C
°C
mJ
A
* 1 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
* 2 VDD=50V, L=500 μ H, IAV=20A (Fig.1)
* 3 L ≤ 500 μ H, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7539-002
2SK4124-1E
Product & Package Information
? Package : TO-3P-3L
? JEITA, JEDEC : SC-65, TO-247, SOT-199
? Minimum Packing Quantity : 30 pcs./magazine
15.6
4.8
1.5
3.2
7.0
Marking
Electrical Connection
2
2.0
3.0
13.6
K4124
LOT No.
1
1.0
0.6
1
2
3
3
1 : Gate
2 : Drain
3 : Source
5.45
5.45
TO-3P-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM TC-00002752/40412 TKIM TC-00002745/D0507 TIIM TC-00001052/41807QB TIIM TC-00000661 No. A0746-1/7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4124_0712 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4124_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4124-1E | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD - NCH 10V DRIVE SERIES |
| 2SK4124-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK4125 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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