参数资料
型号: 2SK4124
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: MOSFET N-CH 500V 20A TO-3PB
产品目录绘图: TO-3PB Package N-Channel Top
标准包装: 100
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 430 毫欧 @ 8A,10V
闸电荷(Qg) @ Vgs: 46.6nC @ 10V
输入电容 (Ciss) @ Vds: 1200pF @ 30V
功率 - 最大: 2.5W
安装类型: 通孔
封装/外壳: TO-3P-3,SC-65-3
供应商设备封装: TO-3PB
包装: 托盘
产品目录页面: 1537 (CN2011-ZH PDF)
其它名称: 869-1070
2SK4124
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
500
100
±100
V
μ A
nA
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID=10A
3
4.9
9.7
5
V
S
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=8A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=20A
IS=20A, VGS=0V
0.33
1200
250
55
26.5
95
145
58
46.6
8.7
27.3
1.0
0.43
1.3
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
≥ 50 Ω
RG
L
10V
0V
VIN
VIN
VDD=200V
ID=10A
RL=20 Ω
10V
0V
50 Ω
2SK4124
VDD
PW=10 μ s
D.C. ≤ 0.5%
G
D
VOUT
2SK4124
Ordering Information
P.G
RGS=50 Ω
S
2SK4124-1E
Device
Package
TO-3P-3L
Shipping
30pcs./magazine
memo
Pb Free
No. A0746-2/7
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