参数资料
型号: 2SK4040-01
厂商: FUJI ELECTRIC CO LTD
元件分类: JFETs
英文描述: 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TFP, 4 PIN
文件页数: 14/19页
文件大小: 333K
代理商: 2SK4040-01
DW
G.
NO
.
H04-004-03
MS5F6073
4 / 19
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Fuji Electric Device Technology Co.,Ltd.
Dynamic Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
Forward
ID=8.5A
Transconductance gfs
V
DS=25V
7
14
-
S
Input Capacitance
Ciss
V
DS=25V
-
1275
1900
Output Capacitance
Coss
VGS=0V
-
200
300
Reverse Transfer
f=1MHz
9.5
14
pF
Capacitance Crss
-
td(on)
Vcc=300V
-
27
40
Turn-On Time
tr
V
GS=10V
-
27
40
td(off)
I
D=8.5A
-
48
72
ns
Turn-Off Time
tf
RGS=10
-
7
11
Total Gate Charge
Q
G
V
cc=225V
-
33
50
Gate-Source Charge
QGS
ID=17A
-
13.5
21
nC
Gate-Drain Charge
Q
GD
V
GS=10V
-
10.5
16
Reverse Diode
Description
Symbol
Conditions
min.
typ.
max.
Unit
Diode Forward
I
F=17A
On-Voltage VSD
VGS=0V
Tch=25
-
1.20
1.80
V
Reverse Recovery
I
F=17A
Time trr
V
GS=0V
-
0.57
-
Reverse Recovery
-di/dt=100A/s
Charge Qrr
T
ch=25
-
6.5
-
7.Thermal Resistance
Description
Symbol
min.
typ.
max.
Unit
Channel to Case
Rth(ch-c)
0.556
/W
Channel to Ambient
Rth(ch-a)
62.0
/W
Channel to Ambient
Rth(ch-a) Note *1
52
/W
Note *1 : Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2)
Note *2 : Tch150
C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25
,I
AS=7.0A,L=20.2mH,Vcc=45V,RG=50
,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Maximum Avalanche Energy' graph of page 18/19.
Note *4 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 19/19.
Note *5 : IF-ID,-di/dt=50A/s,VccBVDSS,Tch150
C
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