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参数资料
| 型号： | 2SK4040-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TFP, 4 PIN |
| 文件页数： | 17/19页 |
| 文件大小： | 333K |
| 代理商： | 2SK4040-01 |
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Fuji Electric Device Technology Co.,Ltd.
Test
Testing methods and Conditions
Reference
Sampling
Acceptance
No.
Items
Standard
number
1 High Temp.
Temperature : 150+0/-5°C
EIAJ
22
Storage
Test duration : 1000hr
ED4701/200
method 201
2 Low Temp.
Temperature : -55+ 5/ -0°C
EIAJ
22
Storage
Test duration : 1000hr
ED4701/200
method 202
3 Temperat ure
Temperature : 85±2°C
EIAJ
Humidity
Relative humidity : 85±5%
ED4701/100
22
Storage
Test duration : 1000hr
method 103
4 Temperat ure
Temperature : 85±2°C
EIAJ
Humidity
Relative humidity : 85±5%
ED4701/100
22
BIAS
Bias Volt age : VDS(max) * 0.8
method 103
Test duration : 1000hr
5 Unsaturated
Temperature : 130±2°C
EIAJ
(0:1)
Pressurized
Relative humidity : 85±5%
ED4701/100
22
Vapor
Vapor pressure : 230kPa
method 103
Test duration : 96hr
6 Temperat ure
High temp.side : 150
5C/30min.
EIAJ
Cycle
Low temp.side : -555
C/30min.
ED4701/100
22
RT : 5°C
35°C/5min.
method 105
Number of cycles : 100cycles
7 Thermal Shock
Fluid : pure wat er(running water)
High temp.side : 100+0/-5
C
EIAJ
22
Low temp.side : 0+5/-0
C
ED4701/300
Duration time : HT 5min,LT 5min
method 307
Number of cycles : 100cycles
8 Intermittent
Tc=90degree
EIAJ
Operating
TchTch(max.)
ED4701/100
22
Life
Test duration : 3000 cycle
method 106
9 HTRB
Temperature : Tch=150+0/ -5°C
EIAJ
(Gate-source)
Bias Volt age : +VGS(max)
ED4701/100
22
(0:1)
Test duration : 1000hr
method 101
10 HTRB
Temperature : Tch=150+0/ -5°C
EIAJ
(Drain-Source)
Bias Volt age : VDS(max)
ED4701/100
22
Test duration : 1000hr
method 101
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Failure Criteria
Symbols
Unit
Lower Limit
Upper Limit
Breakdown Voltage
BVDSS
LSL
-----
V
Zero gate Voltage Drain-Source Current
IDSS
-----
USL
A
Gate-Source Leak age Current
IGSS
-----
USL
A
Gate Threshold Voltage
VGS(th)
LSL
USL
V
Drain-Sourc e on-state Res istanc e
RDS(on)
-----
USL
Forward Transc onduc tance
gfs
LSL
-----
S
Diode forward on-Voltage
VSD
-----
USL
V
Marking
Soldering
-----
W ith eyes or Microsc ope
-----
and other damages
* LSL : Lower Specification Limit
* USL : Upper Specification Limit
* Before any of elec trical characteristic s meas ure, all tes ting related to the humidity
have c onduc ted after dry ing the package surface for more than an hour at 150°C.
Item
Failure Criteria
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