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参数资料
| 型号： | 2SK4069-S15-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | LEAD FREE, TO-251, MP-3-B, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 293K |
| 代理商： | 2SK4069-S15-AY |
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MOS FIELD EFFECT TRANSISTOR
2SK4069
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18032EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK4069-S15-AY
Note
TO-251(MP-3-b)
2SK4069-ZK-E1-AY
Note
TO-252 (MP-3ZK)
2SK4069-ZK-E2-AY
Note
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb inexternal
electrode.)
DESCRIPTION
The 2SK4069 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 12 m
Ω MAX. (VGS = 10 V, ID = 15 A)
Low QGD: QGD = 3.2 nC TYP.
4.5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±30
A
Drain Current (pulse)
Note1
ID(pulse)
±120
A
Total Power Dissipation (TC = 25°C)
PT1
21
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
18
A
Single Avalanche Energy
Note2
EAS
32.4
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12 V, RG = 25
Ω, VGS = 20 → 0 V, L = 100μH
(TO-251)
(TO-252)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4069-ZK-E2-AY | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4069(1)-S27-AY | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4071-AZ | 1000 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK4071-T-AZ | 1000 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK4073LS | 90 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4069-ZK-E1-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4069-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4070 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070(1)-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-S15-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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