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参数资料
| 型号： | 2SK4069-S15-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | LEAD FREE, TO-251, MP-3-B, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 293K |
| 代理商： | 2SK4069-S15-AY |
Data Sheet D18032EJ2V0DS
2
2SK4069
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 7.5 A
5
10
S
RDS(on)1
VGS = 10 V, ID = 15 A
9.4
12
m
Ω
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = 4.5 V, ID = 15 A
15
21
m
Ω
Input Capacitance
Ciss
860
pF
Output Capacitance
Coss
255
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
90
pF
Turn-on Delay Time
td(on)
14/7.5
Ns
Rise Time
tr
13/4.2
Ns
Turn-off Delay Time
td(off)
1.9/24
Ns
Fall Time
tf
VDD = 12 V, ID = 30 A
VGS = 4.5 V/12 V
RG = 3
Ω
14/4.4
Ns
Total Gate Charge
QG1
VDD = 12 V ,VGS = 12 V, ID = 30 A
17
nC
Total Gate Charge
QG2
VDD = 12 V ,VGS = 4.5 V, ID = 30 A
6.7
nC
Gate to Source Charge
QGS
2.4
nC
Gate to Drain Charge
QGD
VDD = 12 V , ID = 30 A
3.2
nC
Gate Resistance
Rg
1.5
Ω
Body Diode Forward Voltage
Note
VF(S-D)
IF = 30 A, VGS = 0 V
0.9
1.5
V
Reverse Recovery Time
trr
IF = 30 A, VGS = 0 V
29
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
20
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 μs
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
<R>
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相关代理商/技术参数 |
参数描述 |
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| 2SK4069-ZK-E1-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4069-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4070 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070(1)-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-S15-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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