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参数资料
| 型号： | 2SK4081-ZK-E2-AY |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 600 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 286K |
| 代理商： | 2SK4081-ZK-E2-AY |
Data Sheet D18785EJ2V0DS
4
2SK4081
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Current
-
A
0
1
2
3
4
5
6
0
5
10
15
20
25
30
35
Pulsed
10 V
VGS = 20 V
VDS - Drain to Source Voltage - V
I
D
-Drain
Current
-
A
0.01
0.1
1
10
0
4
8
121620
VDS = 10 V
Pulsed
Tch =
55°C
40°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff
)-
Gate
to
Sour
c
e
Cut-off
V
o
ltage
-
V
0
1
2
3
4
5
6
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|
-
Forward
T
ransfer
Admittance
-
S
0.01
0.1
1
10
0.01
0.1
1
10
VDS = 10 V
Pulsed
Tch =
55°C
40°C
25°C
25
°C
75
°C
125
°C
150
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
D
S
(on)
-
Drai
n
to
Source
O
n
-state
Res
istanc
e
-
Ω
0
2
4
6
8
10
12
0
5
10
15
20
Pulsed
ID = 2.0 A
1.0 A
VGS - Gate to Source Voltage - V
R
D
S
(on)
-
Drai
n
to
Source
O
n
-state
Res
istanc
e
-
Ω
0
2
4
6
8
10
12
0.01
0.1
1
10
20 V
VGS = 10 V
Pulsed
ID - Drain Current - A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4082 | 3.5 A, 600 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4083U | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK4083 | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK4087LS | 14 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4091-ZK-E1-AY | 30 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4082 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4082-S17-AY | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4084LS | 功能描述:MOSFET N-CH 500V 14A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4085LS | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4085LS_0710 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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