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参数资料
| 型号： | 2SK4081-ZK-E2-AY |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 600 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 286K |
| 代理商： | 2SK4081-ZK-E2-AY |
Data Sheet D18785EJ2V0DS
5
2SK4081
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
R
DS
(o
n
)-
Drai
n
to
Sourc
e
On-sta
te
Re
sist
ance
-
Ω
0
2
4
6
8
10
12
-75
-25
25
75
125
175
ID = 2.0 A
1.0 A
VGS = 10 V
Pulsed
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rs
s-
Capacitance
-
pF
0.1
1
10
100
1000
10000
0.1
1
10
100
1000
Crss
Ciss
Coss
VGS = 0 V
f = 1 MHz
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(on)
,t
r,
t
d(of
f)
,t
f-
S
w
itching
Time
-
ns
1
10
100
1000
0.1
1
10
VDD = 150 V
VGS = 10 V
RG = 10
Ω
tf
tr
td(on)
td(off)
ID - Drain Current - A
V
DS
-
Drain
to
S
ource
Voltage
-
V
0
100
200
300
400
500
600
012
3
456
78
0
2
4
6
8
10
12
VDS
VGS
ID = 2.0 A
VDD = 450 V
300 V
150 V
QG - Gate Charge - nC
V
GS
-
Gate
to
So
urce
Voltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
-
Diode
Forward
Current
-
A
0.01
0.1
1
10
100
0
0.5
1
1.5
Pulsed
0 V
VGS = 10 V
VF(S-D) - Source to Drain Voltage - V
t
rr-
R
e
verse
Reco
very
Tim
e
-
ns
10
100
1000
0.1
1
10
di/dt = 100 A/
μs
VGS = 0 V
IF - Diode Forward Current - A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4082 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4082-S17-AY | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4084LS | 功能描述:MOSFET N-CH 500V 14A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4085LS | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4085LS_0710 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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