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参数资料
| 型号： | 41C16257 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K × 16（4兆位）充满活力和快速页面模式内存 |
| 文件页数： | 11/17页 |
| 文件大小： | 160K |
| 代理商： | 41C16257 |
IS41C16257
IS41LV16257
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
DR004-1B
05/24/99
ISSI
TRUTH TABLE
Function
RAS
LCAS
LCAS UCAS
UCAS
WE
OE
Address tR/tC
I/O
Standby
H
X
High-Z
Read: Word
L
H
L
ROW/COL
DOUT
Read: Lower Byte
L
H
L
ROW/COL
Lower Byte, DOUT
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, DOUT
Write: Word (Early Write)
L
X
ROW/COL
DIN
Write: Lower Byte (Early Write)
L
H
L
X
ROW/COL
Lower Byte, DIN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
L
H
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, DIN
Read-Write(1,2)
LL
L
H
→LL→H
ROW/COL
DOUT, DIN
Hidden Refresh2)
Read L
→H→L
L
H
L
ROW/COL
DOUT
Write L
→H→L
LLL
X
ROW/COL
DOUT
RAS-Only Refresh
L
H
X
ROW/NA
High-Z
CBR Refresh(3)
H
→L
L
X
High-Z
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS or UCAS active).
3. At least one of the two CAS signals must be active (
LCAS or UCAS).
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