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参数资料
| 型号： | 41C16257 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K × 16（4兆位）充满活力和快速页面模式内存 |
| 文件页数： | 8/17页 |
| 文件大小： | 160K |
| 代理商： | 41C16257 |
IS41C16257
IS41LV16257
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
DR004-1B
05/24/99
ISSI
HIDDEN REFRESH CYCLE(1) (
WE = HIGH; OE = LOW)
CBR
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case,
WE = LOW and OE = HIGH.
2. tOFF is referenced from rising edge of
RAS or CAS, whichever occurs last.
tRAS
tRP
I/O
UCAS/LCAS
RAS
Open
tCP
tRPC
tCSR
tCHR
tRPC
tCSR
tCHR
tRAS
tRP
UCAS/LCAS
RAS
tCRP
tRCD
tRSH
tCHR
tAR
tASC
tRAD
ADDRESS
Row
Column
tRAH
tASR
tRAL
tCAH
I/O
Open
Valid Data
tAA
tCAC
tRAC
tCLZ
tOFF(2)
OE
tOE
tORD
tOD
Don't Care
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