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参数资料
| 型号： | 41C16257 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K × 16（4兆位）充满活力和快速页面模式内存 |
| 文件页数： | 13/17页 |
| 文件大小： | 160K |
| 代理商： | 41C16257 |
IS41C16257
IS41LV16257
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
DR004-1B
05/24/99
ISSI
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
V
3.3V
–0.5 t0 +4.6
VCC
Supply Voltage
5V
–1.0 to +7.0
V
3.3V
–0.5 t0 +4.6
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Operation Temperature
Com.
0 to 70
°C
Ind.
–40 to +85
TSTG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND)
Symbol
Parameter
Voltage
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
5V
4.5
5.0
5.5
V
VCC
Supply Voltage
3.3V
3.0
3.3
3.6
V
VIH
Input High Voltage
5V
2.4
—
VCC + 1.0
V
VIH
Input High Voltage
3.3V
2.0
—
VCC + 0.3
V
VIL
Input Low Voltage
5V
–1.0
—
0.8
V
VIL
Input Low Voltage
3.3
–0.3
—
0.8
V
TA
Ambient Temperature
Com.
0
—
70
°C
Ind.
–40
—
85
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN1
Input Capacitance: A0-A8
5
pF
CIN2
Input Capacitance:
RAS, UCAS, LCAS, WE, OE
7pF
CIO
Data Input/Output Capacitance: I/O0-I/O15
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25
°C, f = 1 MHz, VCC = 5.0V + 10% or Vcc=3.3V ± 10%.
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