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参数资料
| 型号： | 41C16257 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K × 16（4兆位）充满活力和快速页面模式内存 |
| 文件页数： | 16/17页 |
| 文件大小： | 160K |
| 代理商： | 41C16257 |
IS41C16257
IS41LV16257
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
DR004-1B
05/24/99
ISSI
AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless
otherwise noted.)
-35
-60
Symbol
Parameter
Min. Max.
Units
tACH
Column-Address Setup Time to
CAS
15
—
15
—
ns
Precharge during WRITE Cycle
tOEH
OE Hold Time from WE during
8
—
15
—
ns
READ-MODIFY-WRITE cycle(18)
tDS
Data-In Setup Time(15, 22)
0—
ns
tDH
Data-In Hold Time(15, 22)
6—
10
—
ns
tRWC
READ-MODIFY-WRITE Cycle Time
80
—
140
—
ns
tRWD
RAS to WE Delay Time during
45
—
80
—
ns
READ-MODIFY-WRITE Cycle(14)
tCWD
CAS to WE Delay Time(14,20)
25
—
36
—
ns
tAWD
Column-Address to
WE Delay Time(14)
30
—
49
—
ns
tPC
Fast Page Mode READ or WRITE
12
—
25
—
ns
Cycle Time(24)
tRASP
RAS Pulse Width
35
100K
60
100K
ns
tCPA
Access Time from
CAS Precharge(15)
—21
—
34
ns
tPRWC
READ-WRITE Cycle Time(24)
40
—
56
—
ns
tOFF
Output Buffer Turn-Off Delay from
3
15
3
15
ns
CAS or RAS(13,15,19, 29)
tWHZ
Output Disable Delay from
WE
315
3
15
ns
tCLCH
Last
CAS going LOW to First CAS
10
—
10
—
ns
returning HIGH(23)
tCSR
CAS Setup Time (CBR REFRESH)(30,20)
8—
10
—
ns
tCHR
CAS Hold Time (CBR REFRESH)(30,21)
8—
10
—
ns
tORD
OE Setup Time prior to RAS during
0
—
0
—
ns
HIDDEN REFRESH Cycle
tREF
Refresh Period (512 Cycles)
—
8
—
8
ms
tT
Transition Time (Rise or Fall)(2, 3)
150
1
50
ns
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