- 您现在的位置：买卖IC网 > PDF目录31729 > 4AE11 (Hitachi,Ltd.) Silicon NPN/PNP Triple Diffused(三倍扩散NPN/PNP晶体管) PDF资料下载
参数资料
| 型号： | 4AE11 |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN/PNP Triple Diffused(三倍扩散NPN/PNP晶体管) |
| 中文描述： | 硅npn型/进步党三漫射（三倍扩散npn型/进步党晶体管） |
| 文件页数： | 3/6页 |
| 文件大小： | 51K |
| 代理商： | 4AE11 |
4AE11
3
0
Case Temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
50
100
150
20
60
40
4 device operation
3 device operation
2 device operation
1 device operation
Note: Collector power dissipation of each devices
is identical.
Collector to emitter voltage VCE (V)
Collector
current
I
C
(mA)
0
Typical Output Characteristics (NPN)
12345
100
200
300
400
500
TC = 25°C
IB = 0
10
A
20
30
40
50
60
70
80
100
90
10
20
50
100
200
500
1,000
2,000
5,000
10,000
Collector current IC (mA)
DC
current
transfer
ratio
h
FE
1
2
5
10 20
50 100 200 500 1,000
DC Current Transfer Ratio
vs. Collector Current (NPN)
T C
=
75
°C
–25
°C
25
°C
VCE= 1.5 V
Pulse
相关PDF资料 |
PDF描述 |
|---|---|
| 4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array(N沟道/P沟道功率MOSFET阵列) |
| 4AM17 | Silicon N/P Channel MOS FET High Speed Power Switching |
| 4N25STB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N26MTA-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N26MTB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 4AE12 | 制造商:ROHM 制造商全称:Rohm 功能描述:Power Transistor Arrays |
| 4AEGBW5500A3LJ | 制造商:KEMET Corporation 功能描述:BOX CAP,DC-LINK APPLICATIONS,50UF,450V,5%,37.5MM,BULK - Boxed Product (Development Kits) |
| 4AEGBW6100A3NJ | 制造商:KEMET Corporation 功能描述:BOX CAP,DC-LINK APPLICATIONS - Boxed Product (Development Kits) |
| 4AEJBW5300A3LJ | 制造商:KEMET Corporation 功能描述:BOX CAP,DC-LINK APPLICATIONS - Boxed Product (Development Kits) |
| 4AEJBW5500A3NJ | 制造商:KEMET Corporation 功能描述:BOX CAP,DC-LINK APPLICATIONS - Boxed Product (Development Kits) |
发布紧急采购，3分钟左右您将得到回复。