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参数资料
| 型号： | 4AE11 |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN/PNP Triple Diffused(三倍扩散NPN/PNP晶体管) |
| 中文描述： | 硅npn型/进步党三漫射（三倍扩散npn型/进步党晶体管） |
| 文件页数： | 4/6页 |
| 文件大小： | 51K |
| 代理商： | 4AE11 |
4AE11
4
0.1
0.2
0.5
1.0
2
5
VBE (sat)
VCE (sat)
10
Collector current IC (mA)
2
5
10
20
50
100 200
500
Collector
to
emitter
saturation
voltage
V
CE
(sat)
(V)
Base
to
emitter
saturation
voltage
V
BE
(sat)
(V)
Saturation Voltage
vs. Collector Current (NPN)
TC = 25°C
IC/IB = 200
200
500
Collector to emitter voltage VCE (V)
Collector
current
I
C
(mA)
0
Typical Output Characteristics (PNP)
–100
–200
–300
–400
–500
–1
–2
–3
–4
–5
TC = 25°C
IB = 0
–20
A
–40
–60
–80
–100
–120
–180
–160
–140
–200
50
100
200
500
1,000
2,000
5,000
10,000
Collector current IC (mA)
DC
current
transfer
ratio
h
FE
–1
–3
–10
–30
–100 –300 –1,000
DC Current Transfer Ratio
vs. Collector Current (PNP)
T C
=
75
°C
–25
°C
25
°C
VCE= –1.5 V
Pulse
–0.1
–0.2
–0.5
–1.0
–2
–5
–10
Collector current IC (mA)
–2
–5
–10 –20
–50 –100–200 –500
Collector
to
emitter
saturation
voltage
V
CE
(sat)
(V)
Base
to
emitter
saturation
voltage
V
BE
(sat)
(V)
Saturation Voltage
vs. Collector Current (PNP)
VBE (sat)
VCE (sat)
TC = 25°C
IC/IB = 200
200
500
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