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参数资料
| 型号： | 4N35GVSERIES |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 中文描述： | 与光电晶体管光电耦合器输出 |
| 文件页数： | 2/9页 |
| 文件大小： | 147K |
| 代理商： | 4N35GVSERIES |
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99
87
Features
Approvals:
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D FIMKO (SETI): EN 60950,
Certificate number 12399
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D VDE 0884, Certificate number 94778
VDE 0884 related features:
D Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
D Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV
D Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
D Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
D Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D Thickness through insulation ≥ 0.75 mm
General features:
D Isolation materials according to UL94-VO
D Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D Climatic classification 55/100/21 (IEC 68 part 1)
D Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D Low temperature coefficient of CTR
D Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
VR
5
V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 ms
IFSM
3
A
Power dissipation
Tamb ≤ 25°C
PV
100
mW
Junction temperature
Tj
125
°C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VCEO
7
V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Tamb ≤ 25°C
PV
150
mW
Junction temperature
Tj
125
°C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
t = 1 min
VIO
3.75
kV
Total power dissipation
Tamb ≤ 25°C
Ptot
250
mW
Ambient temperature range
Tamb
–55 to +100
°C
Storage temperature range
Tstg
–55 to +125
°C
Soldering temperature
2 mm from case, t
≤ 10 s
Tsd
260
°C
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