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参数资料
| 型号： | 4N35GVSERIES |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 中文描述： | 与光电晶体管光电耦合器输出 |
| 文件页数： | 4/9页 |
| 文件大小： | 147K |
| 代理商： | 4N35GVSERIES |
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99
89
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
Isi
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
Tamb ≤ 25°C
Psi
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
VIOTM
6
kV
Safety temperature
Tsi
150
Insulation Rated Parameters (according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage –
Routine test
100%, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage – tTr = 60 s, ttest = 10 s,
VIOTM
6
kV
gg
Lot test (sample test)
Tr
test
(see figure 2)
Vpd
1.3
kV
Insulation resistance
VIO = 500 V
RIO
1012
W
VIO = 500 V,
Tamb = 100°C
RIO
1011
W
VIO = 500 V,
Tamb = 150°C
(construction test only)
RIO
109
W
0
25
50
75
125
0
50
100
150
200
300
P
–
T
otal
Power
Dissipation
(
mW
)
tot
Tsi – Safety Temperature ( °C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
V
IOTM
V
Pd
V
IOWM
V
IORM
V
t
4
t
3
t
test
t
stres
t
2
t
1
t
0
13930
t
Tr
= 60 s
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
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