- 您现在的位置：买卖IC网 > PDF目录30704 > 4N35GVSERIES (Vishay Intertechnology,Inc.) Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits PDF资料下载
参数资料
| 型号： | 4N35GVSERIES |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 中文描述： | 与光电晶体管光电耦合器输出 |
| 文件页数： | 6/9页 |
| 文件大小： | 147K |
| 代理商： | 4N35GVSERIES |
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99
91
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
0
50
100
150
200
250
300
0
40
80
120
P
–
T
otal
Power
Dissipation
(
mW
)
Tamb – Ambient Temperature (
°C)
96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 6. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )
96 11862
F
I
–
Forward
Current
(
mA
)
Figure 7. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0
10 20 30 40 50 60 70 80
Tamb – Ambient Temperature ( °C
)
96 11874
CTR
–
Relative
Current
T
ransfer
Ratio
rel
VCE=10V
IF=10mA
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
1
10
100
1000
10000
0
102030 405060 708090 100
Tamb – Ambient Temperature ( °C
)
96 11875
I
–
Collector
Dark
Current,
CEO
with
open
Base
(
nA
)
VCE=10V
IF=0
Figure 9. Collector Dark Current vs.
Ambient Temperature
0.001
0.010
0.100
1.000
1
10
100
IF – Forward Current ( mA )
96 11876
I
–
Collector
Base
Current
(
mA
)
CB
VCB=10V
Figure 10. Collector Base Current vs. Forward Current
0.01
0.10
1.00
10.00
100.00
0.1
1.0
10.0
100.0
IF – Forward Current ( mA )
96 11904
VCE=10V
I
–
Collector
Current
(
mA
)
C
Figure 11. Collector Current vs. Forward Current
相关PDF资料 |
PDF描述 |
|---|---|
| 4N35MTA-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35MTB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35S1TA-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35S1TB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35STB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N35M | 功能描述:晶体管输出光电耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER PHOTOTRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER, TRANSISTOR O/P 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLERPHOTOTRANSISTOR 7.5KV 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER, PHOTOTRANSISTOR, 7.5KV; No. of Channels:1; Isolation Voltage:7.5kV; Optocoupler Output Type:Phototransistor; Input Current:10mA; Output Voltage:30V; Opto Case Style:DIP; No. of Pins:6 |
| 4N35-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N35M_F132 | 功能描述:晶体管输出光电耦合器 Phototransistor Output RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35MTA-V | 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
发布紧急采购，3分钟左右您将得到回复。