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参数资料
| 型号： | 5962F0323601QXX |
| 元件分类： | SRAM |
| 英文描述： | 128K X 32 STANDARD SRAM, 15 ns, CQFP68 |
| 封装： | CERAMIC, QFP-68 |
| 文件页数： | 13/16页 |
| 文件大小： | 297K |
| 代理商： | 5962F0323601QXX |
6
AC CHARACTERISTICS READ CYCLE (Pre and Post-Radiation)*
(-55
°C to +125°C for (C) screening and -40°C to +125°C for (W) screening, V
DD1 = VDD1 (min), VDD2 = VDD2 (min))
Notes:
* Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019.
1. Guaranteed but not tested.
2. Three-state is defined as a 200mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the latter falling edge of E1 or rising edge of E2.
4. The EF (enable false) notation refers to the latter rising edge of E1 or falling edge of E2.
SYMBOL
PARAMETER
8R128K32-15
MIN
MAX
UNIT
tAVAV
1
Read cycle time
15
ns
tAVQV
Address to data valid
15
ns
tAXQX
2
Output hold time from address change
3
ns
tGLQX
2,1
G-controlled output enable time
0
ns
tGLQV
G-controlled output data valid
7
ns
tGHQZ
2
G-controlled output three-state time
7
ns
tETQX
2,3
E-controlled output enable time
5
ns
tETQV
3
E-controlled access time
15
ns
tEFQZ
2,4
E-controlled output three-state time2
7ns
tBLQX
1
LHWE, HHWE Enable to Output in Low-Z
0
ns
tBHQZ
LHWE, HHWE Enable to Output in High-Z
7
ns
tBLQV
LHWE, HHWE Enable to data valid
10
ns
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