参数资料
型号: 933741030163
厂商: NXP SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.7 A, 1000 V, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED, GLASS PACKAGE-2
文件页数: 11/12页
文件大小: 71K
代理商: 933741030163
1996 Sep 18
8
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYD33 series
BYD33D to M
a=IF(RMS)/IF(AV); VR =VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
MGA869
2.4
0
1.6
0.8
a = 3
2.5 2
P
(W)
I
(A)
F(AV)
0.8
1.6
1.57
1.42
BYD33U and V
a=IF(RMS)/IF(AV); VR =VRRMmax; δ = 0.5.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
MLB904
2.4
0
1.6
0.8
a = 3 2.5 2
P
(W)
I
(A)
F(AV)
0.8
1.6
1.57
1.42
BYD33D to M
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
200
0
400
1200
0
MGA861
800
100
V
(V)
R
Tj
( C)
o
DG
J
K
M
BYD33U and V
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
handbook, halfpage
200
0
2000
0
MLB907
1000
100
V
(V)
R
Tj
( C)
o
UV
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
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