参数资料
型号: 933741030163
厂商: NXP SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.7 A, 1000 V, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED, GLASS PACKAGE-2
文件页数: 7/12页
文件大小: 71K
代理商: 933741030163
1996 Sep 18
4
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYD33 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.19.
For more information please refer to the
“General Part of associated Handbook”.
maximum slope of reverse recovery
current
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = 1A/s;
see Fig.20
BYD33D to J
6A/
s
BYD33K to V
5A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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