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参数资料
| 型号： | 933741030163 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.7 A, 1000 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 6/12页 |
| 文件大小： | 71K |
| 代理商： | 933741030163 |
1996 Sep 18
3
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYD33 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IFRM
repetitive peak forward current
Tamb =65 °C; see Figs 8 and 9
BYD33D to M
7A
BYD33U and V
6A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
20
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
BYD33D to J
10
mJ
BYD33K to V
7mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Figs 12 and 13
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 14 and 15
1.1
V
IF =1A;
see Figs 14 and 15
1.3
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD33D
300
V
BYD33G
500
V
BYD33J
700
V
BYD33K
900
V
BYD33M
1100
V
BYD33U
1300
V
BYD33V
1500
V
IR
reverse current
VR =VRRMmax;
see Fig.16
1
A
VR =VRRMmax;
Tj = 165 °C; see Fig.16
100
A
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A
see Fig.21
BYD33D to J
250
ns
BYD33K and M
300
ns
BYD33U and V
500
ns
Cd
diode capacitance
f = 1 MHz; VR =0V;
see Figs 17 and 18
20
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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