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参数资料
| 型号： | 933741030163 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.7 A, 1000 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 5/12页 |
| 文件大小： | 71K |
| 代理商： | 933741030163 |
1996 Sep 18
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYD33 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD33D
200
V
BYD33G
400
V
BYD33J
600
V
BYD33K
800
V
BYD33M
1000
V
BYD33U
1200
V
BYD33V
1400
V
VR
continuous reverse voltage
BYD33D
200
V
BYD33G
400
V
BYD33J
600
V
BYD33K
800
V
BYD33M
1000
V
BYD33U
1200
V
BYD33V
1400
V
IF(AV)
average forward current
Ttp =55 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD33D to M
1.30
A
BYD33U and V
1.26
A
IF(AV)
average forward current
Tamb =65 °C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD33D to M
0.70
A
BYD33U and V
0.67
A
IFRM
repetitive peak forward current
Ttp =55 °C; see Figs 6 and 7
BYD33D to M
12
A
BYD33U and V
11
A
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