参数资料
型号: 93LC46/P
厂商: Microchip Technology
文件页数: 4/20页
文件大小: 0K
描述: IC EEPROM 1KBIT 1MHZ 8DIP
标准包装: 60
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 1K(128 x 8 或 64 x 16)
速度: 1MHz
接口: Microwire 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
产品目录页面: 1450 (CN2011-ZH PDF)
93LC46/56/66
TABLE 1-1:
INSTRUCTION SET FOR 93LC46: ORG = 1 (X 16 ORGANIZATION)
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
A5 A4 A3 A2 A1 A0
1 1 XXXX
A5 A4 A3 A2 A1 A0
1 0 XXXX
A5 A4 A3 A2 A1 A0
0 1 XXXX
0 0 XXXX
Data In
D15 - D0
D15 - D0
Data Out
D15 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
25
9
9
9
25
25
9
TABLE 1-2:
INSTRUCTION SET FOR 93LC46: ORG = 0 (X 8 ORGANIZATION)
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
A6 A5 A4 A3 A2 A1 A0
11XXXXX
A6 A5 A4 A3 A2 A1 A0
10XXXXX
A6 A5 A4 A3 A2 A1 A0
01XXXXX
00XXXXX
Data In
D7 - D0
D7 - D0
Data Out
D7 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
18
10
10
10
18
18
10
TABLE 1-3:
INSTRUCTION SET FOR 93LC56: ORG = 1 (X 16 ORGANIZATION)
Instruction
SB
Opcode
Address
Data In
Data Out
Req. CLK
Cycles
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
1
1
1
1
1
1
1
10
00
11
00
01
00
00
X A6 A5 A4 A3 A2 A1 A0
11XXXXXX
X A6 A5 A4 A3 A2 A1 A0
10XXXXXX
X A6 A5 A4 A3 A2 A1 A0
01XXXXXX
00XXXXXX
D15 - D0
D15 - D0
D15 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
27
11
11
11
27
27
11
TABLE 1-4:
INSTRUCTION SET FOR 93LC56: ORG = 0 (X 8 ORGANIZATION)
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
X A7 A6 A5 A4 A3 A2 A1 A0
11XXXXXXX
X A7 A6 A5 A4 A3 A2 A1 A0
10XXXXXXX
X A7 A6 A5 A4 A3 A2 A1 A0
01XXXXXXX
00XXXXXXX
Data In
D7 - D0
D7 - D0
Data Out
D7 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK
Cycles
20
12
12
12
20
20
12
DS21712B-page 4
? 2004 Microchip Technology Inc.
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