参数资料
型号: A3980KLPTR-T
厂商: Allegro Microsystems Inc
文件页数: 15/19页
文件大小: 0K
描述: IC DRIVER MICROSTEPPING 28-TSSOP
标准包装: 1
应用: 步进电机驱动器
输出数: 1
电流 - 输出: ± 1A
电压 - 负载: 7 V ~ 50 V
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 28-SOIC(0.173",4.40mm 宽)裸露焊盘
供应商设备封装: 28-TSSOP 裸露焊盘
包装: 标准包装
产品目录页面: 1140 (CN2011-ZH PDF)
其它名称: 620-1298-6
A3980
Automotive DMOS Microstepping Driver
with Translator
Application Information
The A3980 is a power circuit, therefore careful consider-
ation must be given to power dissipation and the effects
of high currents on interconnect and supply wiring.
Power Dissipation. A ? rst order approximation of
the power dissipation in the A3980 can be determined
by examining the power dissipation in each of the
two full-bridges during each of the operation modes.
When synchronous recti ? cation is used, current ? ow
most of the time through the DMOS FETs that are
switched on. When synchronous recti ? cation is not
used, the current ? ows through the body diode of
the DMOS FETs during the decay phase. The use of
fast or slow decay also affects the dissipation. All the
above combinations can be calculated from ? ve basic
DMOS output states, shown in the following illustrations.
+
M
Drive Current Ramp
Diagonally opposite DMOS
output transistors are on. Cur-
rent ? ows from positive supply
through load to ground. Used in
all combinations.
Dissipation is I 2 R losses in the
DMOS transistors:
P D = I 2 (R DSONH + R DSONL )
Synchronous Slow Decay
Both low-side DMOS output
transistors are on. Current circu-
lates through both transistors and
the load.
Dissipation is I 2 R losses in the
DMOS transistors:
+
M
+
M
Non-Synchronous Slow Decay
One low-side DMOS output tran-
sistor and one body diode conduct-
ing. Current circulates through the
diode, the transistor, and the load.
Dissipation is I 2 R losses in the
DMOS transistors plus IV loss in
P SS = I 2 (2
× R DSONL )
the diode:
P NS = (I 2
× R DSONL ) + (I × V F )
Synchronous Fast Decay
Diagonally opposite DMOS output
transistors are on. Current ? ows
from ground through load to posi-
tive supply.
Dissipation is I 2 R losses in the
DMOS transistors:
P SF = I 2 (R DSONH + R DSONL )
+
M
+
M
Non-Synchronous Fast Decay
Diagonally opposite body diodes
conducting. Current ? ows from
ground through load to positive
supply.
Dissipation is IV losses in the
diodes:
P NF = I (V FH + V Fl )
Allegro MicroSystems, Inc.
115 Northeast Cutoff
14
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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