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| 型号： | A4989SLDTR-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 5/17页 |
| 文件大小： | 0K |
| 描述： | IC FULL BRDG MFET DRVR 38TSSOP |
| 标准包装： | 1 |
| 应用： | 步进电机控制器，2 相 |
| 输出数： | 1 |
| 电压 - 负载： | 12 V ~ 50 V |
| 电源电压： | 3 V ~ 5.5 V |
| 工作温度： | -20°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 38-TFSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 38-TSSOP |
| 包装： | 标准包装 |
| 其它名称： | 620-1389-6 |
A4989
Dual Full-Bridge MOSFET Driver
with Microstepping Translator
ELECTRICAL CHARACTERISTICS (continued) at T A = 25°C, V DD = 5 V, V BB = 12 to 50V, unless noted otherwise
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Current Control
Blank Time t BLANK
Fixed Off-Time t OFF
R OSC = 10 k Ω , 1.2 1.5 1.8
R OSC = 10 k Ω , , SR= High 18.12 – 23.16
μ s
μ s
Reference Input Voltage V REF
0.8 – 2 V
Internal Reference Voltage V REFInt
20 k Ω to V DD
1.9 2.0 2.1 V
Current Trip Point Error 3
E ITRIP
V REF = 2 V – – ±5 %
Reference Input Current 1
I REF
–3 0 3
μ A
Oscillator Frequency f OSC
Protection
VREG Undervoltage Lockout V REGUV
R OSC = 10 k Ω
Decreasing V REG
3.2 4 4.8 MHz
7.5 8 8.5 V
VREG Undervoltage Lockout
Hysteresis
V REGUVHys
100 200 – mV
VDD Undervoltage Lockout V DDUV
Decreasing V DD
2.45 2.7 2.95 V
VDD Undervoltage Lockout
Hysteresis
V DDUVHys
50 100 – mV
Overtemperature Shut Down T TSD
Temperature increasing – 165 – oC
Overtemperature Shut Down
Hysteresis
T TSDHys
Recovery = T TSD – T TSDHys
– 15 – oC
Control Timing
STEP Low Duration t STEPL
STEP High Duration t STEPH
1 – –
1 – –
μ s
μ s
Setup Duration t SU
Hold Duration t H
Wake Time Duration t WAKE
Input change to STEP pulse;
MS1, MS2, DIR
Input change from STEP pulse;
MS1, MS2, DIR
200 – – ns
200 – – ns
1 – – ms
1 For input and output current specifications, negative current is defined as coming out of (sourcing) the specified device pin.
2 A RESET pulse of this duration will reset the translator to the Home position without entering Sleep mode.
3 Current Trip Point Error is the difference between actual current trip point and the target current trip point, referred to full
scale (100%) current: E ITRIP = 100 × (I TRIPActual – I TRIPTarget ) / I FullScale %
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions*
Value Units
Package Thermal Resistance
R θ JA
4-layer PCB, based on JEDEC standard
1-layer PCB with copper limited to solder pads
51
127
oC/W
oC/W
*Additional thermal information available on Allegro website.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
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