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| 型号： | A82DL32X4T |
| 厂商： | AMIC Technology Corporation |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash |
| 中文描述： | 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位（4Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行动 |
| 文件页数： | 55/60页 |
| 文件大小： | 931K |
| 代理商： | A82DL32X4T |
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A82DL32x4T(U) Series
PRELIMINARY
(August, 2005, Version 0.0)
54
AMIC Technology, Corp.
Timing Waveforms (continued)
Write Cycle 2
(Chip Enable Controlled)
t
WC
Address
CE1_S
CE2_S
DIN
t
DH
t
DW
(4)
(4)
t
CW
5
t
AW
t
WR
3
WE
DOUT
t
WHZ
7
t
WP
2
t
CW
5
t
AS
1
Notes: 1. t
AS
is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (t
WP
) of a low
CE1_S
, a high CE2_S and a low WE .
3. t
WR
is measured from the earliest of
CE1_S
or WE going high or CE2_S going low to the end of the Write cycle.
4. If the
CE1_S
low transition or the CE2_S high transition occurs simultaneously with the WE low transition or after
the WE transition, outputs remain in a high impedance state.
5. t
CW
is measured from the later of
CE1_S
going low or CE2_S going high to the end of Write.
6. OE is continuously low. ( OE = V
IL
)
7. Transition is measured
±
500mV from steady state. This parameter is sampled and not 100% tested.
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