- 您现在的位置：买卖IC网 > PDF目录375159 > A82DL32X4T (AMIC Technology Corporation) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash PDF资料下载
参数资料
| 型号： | A82DL32X4T |
| 厂商： | AMIC Technology Corporation |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash |
| 中文描述： | 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位（4Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行动 |
| 文件页数： | 57/60页 |
| 文件大小： | 931K |
| 代理商： | A82DL32X4T |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页当前第57页第58页第59页第60页
A82DL32x4T(U) Series
PRELIMINARY
(August, 2005, Version 0.0)
56
AMIC Technology, Corp.
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ. (Note 1)
Max. (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Chip Erase Time
27
sec
Excludes 00h programming
prior to erasure (Note 4)
Byte Programming Time
5
150
μ
s
Word Programming Time
7
210
μ
s
Accelerated Word/Byte Programming Time
4
120
μ
s
Byte Mode
9
27
sec
Chip Programming Time
(Note 3)
Word Mode
6
18
sec
Excludes system-level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0V VCC_F, 10,000 cycles. Additionally,
programming typically assumes checkerboard pattern.
2. Under worst case conditions of 90
°
C, VCC_F = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 12
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 10,000 cycles.
FLASH LATCH-UP CHARACTERISTICS
Description
Min.
Max.
Input Voltage with respect to VSS on all I/O pins
-1.0V
VCC_F+1.0V
VCC_F Current
-100 mA
+100 mA
Input voltage with respect to VSS on all pins except I/O pins
(including A9,
OE
and
RESET
)
-1.0V
12.5V
Includes all pins except VCC_F. Test conditions: VCC_F = 3.0V, one pin at time.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150
°
C
125
°
C
10
Years
Minimum Pattern Data Retention Time
20
Years
相关PDF资料 |
PDF描述 |
|---|---|
| A82DL3234UG-70 | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash |
| A82DL3224TG-70IF | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash |
| A82DL3234TG-70IF | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash |
| A82DL3244TG-70IF | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash |
| A82DL3224 | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A82N380 | 制造商:Intel 功能描述: |
| A82S | 制造商:M/A-COM Technology Solutions 功能描述:GAIN BLOCK |
| A83 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Cascadable Amplifier 10 to 500 MHz |
| A8-3 | 制造商:RAACO 功能描述:A8-3 INSERT 制造商:RAACO 功能描述:A8-3 INSERT; For Use With:250-3 Drawer; Accessory Type:Insert; SVHC:No SVHC (19-Dec-2012); Extended Length:47mm ;RoHS Compliant: NA |
| A830-0273 | 制造商:MERKLE-KORFF INDUSTRIES 功能描述:A830-0273 72-5A830273 GEAR CLUSTER (28/9) |
发布紧急采购，3分钟左右您将得到回复。