参数资料
型号: AD5231BRU50
厂商: Analog Devices Inc
文件页数: 15/28页
文件大小: 0K
描述: IC DGTL POT 1024POS 16-TSSOP
产品变化通告: Product Discontinuance 27/Oct/2011
标准包装: 96
接片: 1024
电阻(欧姆): 50k
电路数: 1
温度系数: 标准值 600 ppm/°C
存储器类型: 非易失
接口: 4 线 SPI(芯片选择)
电源电压: 2.7 V ~ 5.5 V,±2.25 V ~ 2.75 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 16-TSSOP
包装: 管件
AD5231
Data Sheet
Rev. D | Page 22 of 28
FLASH/EEMEM RELIABILITY
The Flash/EE memory array on the AD5231 is fully qualified
for two key Flash/EE memory characteristics, namely Flash/EE
memory cycling endurance and Flash/EE memory data
retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four
independent, sequential events. These events are defined as
Initial page erase sequence
Read/verify sequence
Byte program sequence
Second read/verify sequence
During reliability qualification, Flash/EE memory is cycled
from 0x000 to 0x3FF until a first fail is recorded signifying the
endurance limit of the on-chip Flash/EE memory.
As indicated in the Specifications section, the AD5231 Flash/EE
memory endurance qualification has been carried out in
accordance with JEDEC Specification A117 over the industrial
temperature range of 40°C to +85°C. The results allow the
specification of a minimum endurance figure over supply and
temperature of 100,000 cycles, with an endurance figure of
700,000 cycles being typical of operation at 25°C.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the AD5231 has
been qualified in accordance with the formal JEDEC Retention
Lifetime Specification (A117) at a specific junction temperature
(TJ = 55°C). As part of this qualification procedure, the
Flash/EE memory is cycled to its specified endurance limit,
described previously, before data retention is characterized.
This means that the Flash/EE memory is guaranteed to retain
its data for its full specified retention lifetime every time the
Flash/EE memory is reprogrammed. It should also be noted
that retention lifetime, based on an activation energy of 0.6 eV,
derates with TJ, as shown in Figure 45. For example, the data is
retained for 100 years at 55°C operation, but reduces to 15 years
at 85°C operation. Beyond these limits, the part must be
reprogrammed so that the data can be restored.
300
250
0
40
RE
T
E
NT
IO
N
(
Y
ears)
200
150
100
50
60
70
80
90
100
110
TJ JUNCTION TEMPERATURE (°C)
ANALOG DEVICES
TYPICAL PERFORMANCE
AT TJ = 55°C
02739-
044
Figure 45. Flash/EE Memory Data Retention
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