参数资料
| 型号： | AD8659ARZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 18/24页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP RRIO 18V CMOS 14SOIC |
| 标准包装： | 56 |
| 放大器类型： | 通用 |
| 电路数： | 4 |
| 输出类型： | 满摆幅 |
| 转换速率： | 0.07 V/µs |
| 增益带宽积： | 200kHz |
| 电流 - 输入偏压： | 5pA |
| 电压 - 输入偏移： | 350µV |
| 电流 - 电源： | 18µA |
| 电流 - 输出 / 通道： | 12mA |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 18 V，±1.35 V ~ 9 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SO |
| 包装： | 管件 |
Data Sheet
AD8657/AD8659
Rev. B | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—18 V OPERATION
VSY = 18 V, VCM = VSY/2 V, TA = 25°C, unless otherwise specified.
Table 2.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
V
OS
V
CM = 0 V to 18 V
350
V
CM = 0.3 V to 17.7 V, 40°C ≤ TA ≤ +85°C
1.8
mV
V
CM = 0.3 V to 17.7 V, 40°C ≤ TA ≤ +125°C
2
mV
V
CM = 0 V to 18 V, 40°C ≤ TA ≤ +125°C
16
mV
Input Bias Current
I
B
5
20
pA
40°C ≤ T
A ≤ +125°C
2.9
nA
Input Offset Current
I
OS
40
pA
40°C ≤ T
A ≤ +125°C
5.8
nA
Input Voltage Range
0
18
V
Common-Mode Rejection Ratio
CMRR
V
CM = 0 V to 18 V
94
110
dB
V
CM = 0.3 V to 17.7 V, 40°C ≤ TA ≤ +85°C
82
dB
V
CM = 0.3 V to 17.7 V, 40°C ≤ TA ≤ +125°C
80
dB
V
CM = 0 V to 18 V, 40°C ≤ TA ≤ +125°C
64
dB
Large Signal Voltage Gain
A
VO
R
L = 100 k, VO = 0.5 V to 17.5 V
115
120
dB
40°C ≤ T
A ≤ +125°C
105
dB
Offset Voltage Drift
ΔV
OS/ΔT
2
μV/°C
Input Resistance
R
IN
10
G
Input Capacitance, Differential Mode
C
INDM
11
pF
Input Capacitance, Common Mode
C
INCM
3.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High
V
OH
R
L = 100 k to VCM, 40°C ≤ TA ≤ +125°C
17.97
V
Output Voltage Low
V
OL
R
L = 100 k to VCM, 40°C ≤ TA ≤ +125°C
30
mV
Short-Circuit Current
I
SC
±12
mA
Closed-Loop Output Impedance
Z
OUT
f = 1 kHz, A
V = 1
15
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
V
SY = 2.7 V to 18 V
100
115
dB
40°C ≤ T
A ≤ +125°C
90
dB
Supply Current per Amplifier
I
SY
I
O = 0 mA
18
22
A
40°C ≤ T
A ≤ +125°C
34
A
DYNAMIC PERFORMANCE
Slew Rate
SR
R
L = 1 M, CL = 10 pF, AV = 1
80
V/ms
Settling Time to 0.1%
t
S
V
IN = 1 V step, RL = 100 k, CL = 10 pF
15
s
Unity-Gain Crossover
UGC
V
IN = 10 mV p-p, RL = 1 M, CL = 10 pF, AV = 1
230
kHz
Phase Margin
Φ
M
V
IN = 10 mV p-p, RL = 1 M, CL = 10 pF, AV = 1
60
Degrees
Gain Bandwidth Product
GBP
V
IN = 10 mV p-p, RL = 1 M, CL = 10 pF, AV = 100
230
kHz
3 dB Closed-Loop Bandwidth
f
3 dB
V
IN = 10 mV p-p, RL = 1 M, CL = 10 pF, AV = 1
305
kHz
Channel Separation
CS
f = 10 kHz, R
L = 1 M
95
dB
EMI Rejection Ratio of +IN x
EMIRR
V
IN = 100 mVPEAK; f = 400 MHz, 900 MHz,
1800 MHz, 2400 MHz
90
dB
NOISE PERFORMANCE
Voltage Noise
e
n p-p
f = 0.1 Hz to 10 Hz
5
V p-p
Voltage Noise Density
e
n
f = 1 kHz
50
nV/√Hz
f = 10 kHz
45
nV/√Hz
Current Noise Density
i
n
f = 1 kHz
0.1
pA/√Hz
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