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| 型号： | ADG636YRUZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 1/16页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL SPDT 14TSSOP |
| 产品培训模块： | iCMOS™ Switches and Multiplexers for Data Acquisition Switch Fundamentals |
| 标准包装： | 96 |
| 功能： | 开关 |
| 电路： | 2 x SPDT - NC/NO |
| 导通状态电阻： | 290 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 5.5 V，±2.7 V ~ 5.5 V |
| 电流 - 电源： | 1nA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 14-TSSOP |
| 包装： | 管件 |
| 产品目录页面： | 803 (CN2011-ZH PDF) |
1 pC Charge Injection, 100 pA Leakage,
CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
ADG636
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
2002–2009 Analog Devices, Inc. All rights reserved.
FEATURES
1 pC charge injection
±2.7 V to ±5.5 V dual supply
+2.7 V to +5.5 V single supply
Automotive temperature range: 40°C to +125°C
100 pA (maximum at 25°C) leakage currents
85 Ω typical on resistance
Rail-to-rail operation
Fast switching times
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
14-lead TSSOP package
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered instruments
Communication systems
Sample-and-hold systems
Remote-powered equipment
Audio and video signal routing
Relay replacement
Avionics
FUNCTIONAL BLOCK DIAGRAM
ADG636
S1A
D1
6
D2
9
S2B
S2A
S1B
A1
14
A0
1
EN
2
4
5
11
10
LOGIC
02
75
4-
0
01
Figure 1.
GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two indepen-
dently selectable CMOS single pole, double throw (SPDT)
switches. When on, each switch conducts equally well in both
directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
In addition, it offers on resistance of 85 Ω typical, which is matched
to within 2 Ω between channels. The ADG636 also has low power
dissipation yet is capable of high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
PRODUCT HIGHLIGHTS
1.
Ultralow charge injection. QINJ: ±1.5 pC typical over the
full signal range.
2.
Leakage current <0.25 nA maximum at 85°C.
3.
Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply.
4.
Automotive temperature range: 40°C to +125°C.
5.
Small 14-lead TSSOP package.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ADG636YRUZ | 制造商:Analog Devices 功能描述:IC DUAL SPDT SWITCH |
| ADG636YRUZ1 | 制造商:AD 制造商全称:Analog Devices 功能描述:1 pC Charge Injection, 100 pA Leakage, CMOS, ?±5 V/5 V/3 V Dual SPDT Switch |
| ADG636YRUZ-REEL | 功能描述:IC SWITCH DUAL SPDT 14TSSOP RoHS:是 类别:集成电路 (IC) >> 接口 - 模拟开关，多路复用器，多路分解器 系列:- 标准包装:1,000 系列:- 功能:多路复用器 电路:1 x 4:1 导通状态电阻:- 电压电源:双电源 电压 - 电源，单路/双路(±):±5V 电流 - 电源:7mA 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC 包装:带卷 (TR) |
| ADG636YRUZ-REEL1 | 制造商:AD 制造商全称:Analog Devices 功能描述:1 pC Charge Injection, 100 pA Leakage, CMOS, ?±5 V/5 V/3 V Dual SPDT Switch |
| ADG636YRUZ-REEL7 | 功能描述:IC SWITCH DUAL SPDT 14TSSOP RoHS:是 类别:集成电路 (IC) >> 接口 - 模拟开关，多路复用器，多路分解器 系列:- 标准包装:1,000 系列:- 功能:多路复用器 电路:1 x 4:1 导通状态电阻:- 电压电源:双电源 电压 - 电源，单路/双路(±):±5V 电流 - 电源:7mA 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC 包装:带卷 (TR) |
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