收藏本站
参数资料
型号： AFT05MS031NR1
厂商： Freescale Semiconductor
文件页数： 12/33页
文件大小： 1114K
描述： RF FET 40V 520MHZ TO-270-2
标准包装： 1
晶体管类型： LDMOS
频率： 520MHz
增益： 17.7dB
电压 - 测试： 13.6V
电流 - 测试： 10mA
功率 - 输出： 47W
电压 - 额定： 40V
封装/外壳： TO-270AA
供应商设备封装： TO-270-2
包装： 标准包装
其它名称： AFT05MS031NR1DKR
2
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +40
Vdc
Gate--Source Voltage
VGS
--6.0, +12
Vdc
Operating Voltage
VDD
17, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
?C
Case Operating Temperature Range
TC
--40 to +150
?C
Operating Junction Temperature Range
(1,2)
TJ
--40 to +225
?C
Total Device Dissipation @ TC
=25?C
Derate above 25?C
PD
294
1.47
W
W/?C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79?C, 31 W CW, 13.6 Vdc, IDQ
= 10 mA, 520 MHz
R?JC
0.67
?C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
?C
Table 5. Electrical Characteristics
(TA
=25?C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=40Vdc,VGS
=0Vdc)
IDSS
—
—
2
?Adc
Zero Gate Voltage Drain Leakage Current
(VDS
= 13.6 Vdc, VGS
=0Vdc)
IDSS
—
—
1
?Adc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
600
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
=115?Adc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.2Adc)
VDS(on)
—
0.13
—
Vdc
Forward Transconductance
(VDS
=10Vdc,ID
=7.5Adc)
gfs
—
5.8
—
S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
相关PDF资料
PDF描述
AFT09MS031NR1 RF FET 40V 870MHZ TO-270-2
AT2520QB10ZS-350MA LED 2.5X2.0MM 458NM BLUE CLR SMD
AT2520QB10ZS LED 2.5X2.0MM BLUE SMD
AT2520SE9ZS-350MA LED 2.5X2.0MM 623NM RED/ORN SMD
AT2520SE9ZS LED 2.5X2.0MM RED SMD
相关代理商/技术参数
参数描述
A-FT09 制造商:Assmann 功能描述:9w straight Flip-top Dsub backshell
AFT09H310-03SR6 制造商:Freescale Semiconductor 功能描述:AIRFAST RF POWER LDMOS TRANSISTOR, 920-960 MHZ, 56 W AVG., 2 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:900MHZ310W NI1230S-4S - Tape and Reel 制造商:Freescale Semiconductor 功能描述:TRANS RF 900MHZ 310W NI1230S-4S 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS
AFT09H310-04GSR6 制造商:Freescale Semiconductor 功能描述:AIRFAST RF POWER LDMOS TRANSISTOR, 920-960 MHZ, 56 W AVG., 2 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:900MHZ 310W NI1230-4GS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:TRANS RF 900MHZ 310W NI1230-4GS 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS
AFT09MP055GNR1 制造商:Freescale Semiconductor 功能描述:AIRFAST BROADBAND RF POWER LDMOS TRANSISTOR, 764-941 MHZ, 55 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MV9 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:TRANS RF 55W 12.5V TO-270 WB-4 制造商:Freescale Semiconductor 功能描述:764-941MHz 55 W 12.5V Broadband RF Power LDMOS Transistors 制造商:Freescale Semiconductor 功能描述:Transistors RF MOSFET MV9 55W 12.5V TO270WB4G 制造商:Freescale Semiconductor 功能描述:MV9 55W 12.5V TO270WB4G
AFT09MP055N 制造商:Freescale Semiconductor 功能描述:MV9 55W 12.5V TO270WB4 - Bulk
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*