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| 型号： | AFT05MS031NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 23/33页 |
| 文件大小： | 1114K |
| 描述： | RF FET 40V 520MHZ TO-270-2 |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 520MHz |
| 增益： | 17.7dB |
| 电压 - 测试： | 13.6V |
| 电流 - 测试： | 10mA |
| 功率 - 输出： | 47W |
| 电压 - 额定： | 40V |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 标准包装 |
| 其它名称： | AFT05MS031NR1DKR |
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AFT05MS031NR1 AFT05MS031GNR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(TA
=25?C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS
= 13.6 Vdc
?
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
—
1.6
—
pF
Output Capacitance
(VDS
= 13.6 Vdc
?
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
—
49.5
—
pF
Input Capacitance
(VDS
= 13.6 Vdc, VGS
=0Vdc?
30 mV(rms)ac @ 1 MHz)
Ciss
—
109
—
pF
Functional Tests
(1)
(In Freescale Narrowband Test Fixture, 50 ohm system) VDD
= 13.6 Vdc, IDQ
=10mA,Pout
=31W,f=520MHz
Common--Source Amplifier Power Gain
Gps
16.5
17.7
19.0
dB
Drain Efficiency
?D
70.0
71.4
—
%
Load Mismatch/Ruggedness
(In Freescale Test Fixture, 50 ohm system) IDQ
=10mA
Frequency
(MHz)
Signal
Type
VSWR
Pin
(W)
Test Voltage, VDD
Result
520
CW
>65:1 at all Phase Angles
1.1
(3 dB Overdrive)
17
No Device Degradation
1. Measurements made with device in straight lead
configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
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