- 您现在的位置：买卖IC网 > PDF目录36681 > AGR09085EU (LSI CORP) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | AGR09085EU |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 1/9页 |
| 文件大小： | 215K |
| 代理商： | AGR09085EU |
Preliminary Data Sheet
May 2004
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09085E is a high-voltage, laterally diffused
metal oxide semiconductor (LDMOS) RF power tran-
sistor suitable for cellular band, code division multiple
access (CDMA), global system for mobile communi-
cation (GSM), enhanced data for global evolution
(EDGE), and time division multiple access (TDMA)
single and multicarrier class AB wireless base station
amplifier applications. This device is manufactured
on an advanced LDMOS technology offering state-
of-the-art performance, reliability, and best-in-class
thermal resistance. Packaged in an industry-stan-
dard package incorporating internal matching and
capable of delivering a minimum output power of
85 W, it is ideally suited for today's RF power ampli-
fier applications.
Figure 1. Available Packages
Features
■
Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, and traffic codes 8—13:
— Output power (POUT): 20 W.
— Power gain: 18 dB.
— Efficiency: 28%.
— Adjacent channel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc).
1.98 MHz offset: –60 dBc).
— Return loss: 10 dB.
■
High-reliability, gold-metalization process.
■
Internally matched.
■
High gain, efficiency, and linearity.
■
Integrated ESD protection.
■
Si LDMOS.
■
Industry-standard packages.
■
85 W minimum output power.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR09085EU (unflanged)
AGR09085EF (flanged)
YLE 1
06, STYLE 1
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case:
AGR09085EU
AGR09085EF
R
θJC
0.7
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Drain Current—Continuous
ID
8.5
Adc
Total Dissipation at TC = 25 °C:
AGR09085EU
AGR09085EF
PD
250
W
Derate Above 25
°C:
AGR09085EU
AGR09085EF
1.43
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG –65, 150
°C
AGR09085E
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
相关PDF资料 |
PDF描述 |
|---|---|
| AGR09130EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09130E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09130EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09130EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。