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参数资料
| 型号： | AGR09085EU |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 8/9页 |
| 文件大小： | 215K |
| 代理商： | AGR09085EU |
8
Agere Systems Inc.
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
May 2004
AGR09085E
Preliminary Data Sheet
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR09085EU
AGR09085EF
Label Notes:
■
M before the part number denotes model program. X before the part number denotes engineering prototype.
■
The last two letters of the part number denote wafer technology and package type.
■
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
■
ZZZZZZZ = seven-digit assembly lot number on production parts.
■
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
2
3
M-AGR21090U
YYWWLL
AGERE
ZZZZZZZ
1
3
1
AGERE
AGR09085XU
YYWWLL XXXXX
ZZZZZZZ
M-AGR21090F
AGERE
2
ZZZZZZZ
YYWWLL
1
3
2
3
1
AGERE
AGR09085XF
YYWWLL XXXXX
ZZZZZZZ
相关PDF资料 |
PDF描述 |
|---|---|
| AGR09130EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09130E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09130EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09130EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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