- 您现在的位置：买卖IC网 > PDF目录51253 > AGR19090EF (TRIQUINT SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | AGR19090EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 366K |
| 代理商： | AGR19090EF |
90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
E
0
9
0
9
1
R
G
A
Electrical Characteristics
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. dc Characteristics
ti
n
U
e
u
la
V
l
o
b
m
y
S
r
e
t
e
m
a
r
a
P
Thermal Resistance, Junction to Case:
AGR19090EU
AGR19090EF
RθJC
0.75
°C/W
ti
n
U
e
u
la
V
l
o
b
m
y
S
r
e
t
e
m
a
r
a
P
V
e
g
at
lo
V
e
c
r
u
o
s
-
ni
a
r
D
DSS
65
Vdc
V
e
g
at
lo
V
e
c
r
u
o
s
-
e
t
a
G
GS
–0.5, 15
Vdc
Total Dissipation at TC = 25 °C:
AGR19090EU
AGR19090EF
PD
230
W
Derate Above 25 °C:
AGR19090EU
AGR19090EF
—
1.33
W/°C
T
e
r
u
t
a
r
e
p
m
e
T
n
oi
tc
n
u
J
g
ni
t
a
r
e
p
O
J
200
°C
T
e
g
n
a
R
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
STG
–65, 150
°C
ti
n
U
x
a
M
p
y
T
n
i
M
l
o
b
m
y
S
r
e
t
e
m
a
r
a
P
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0 V, ID = 130 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
2.7
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
8
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.67 A)
GFS
—
6.0
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 270 A)
VGS(th)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 28 V, ID = 800 mA)
VGS(Q)
—
3.7
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 0.67 A)
VDS(on)
—
0.08
—
Vdc
300
150
相关PDF资料 |
PDF描述 |
|---|---|
| AGR19125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19090EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19125EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。