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参数资料
| 型号： | AGR19090EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 366K |
| 代理商： | AGR19090EF |
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90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. RF Characteristics
ti
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M
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Dynamic Characteristics
Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
(Part is internally matched both on input and output.)
CRSS
—
2.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
GPS
14.5 15.5 —
dB
Drain Efficiency
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
—
25.8 —
%
Third-order Intermodulation Distortion
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
IM3 measured in a 1.2288 MHz integration BW centered at f1 – 2.5 MHz
and f2 + 2.5 MHz, referenced to the carrier channel power)
IM3
— –34.5 — dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 1.2288 MHz integration BW centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
ACPR
—
–50 — dBc
Input Return Loss
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—
–12 —
dB
Output Power at 1 dB Gain Compression
(VDD = 28 V, POUT = 90 W CW, f = 1990 MHz, IDQ = 800 mA)
P1dB
90
95
—
W
Ruggedness
(VDD = 28 V, POUT = 90 W CW, IDQ = 800 mA, f = 1930 MHz,
VSWR = 10:1 [all phase angles])
Ψ
No degradation in output
power.
(in Supplied Test Fixture)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19090EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19125EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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