参数资料
型号: AGR19180EU
厂商: LSI CORP
元件分类: 功率晶体管
英文描述: 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: SURFACE MOUNT PACKAGE-2
文件页数: 3/9页
文件大小: 230K
代理商: AGR19180EU
Agere Systems Inc.
3
Preliminary Data Sheet
AGR19180E
July 2003
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19180E
A. Schematic
B. Component Layout
Figure 2. AGR19180E Test Circuit
Parts List:
s
Microstrip line:
Z1 0.500 in. x 0.067 in.
Z2, Z17 1.080 in. x 0.110 in.
Z3, Z16 0.210 in. x 0.067 in.
Z4, Z15 2.020 in. x 0.067 in.
Z5, Z6 0.230 in. x 0.067 in.
Z7, Z8 0.455 in. x 0.700 in.
Z9, Z10 1.100 in. x 0.035 in.
Z11, Z12 0.475 in. x 0.740 in.
Z13, Z14 0.100 in. x 0.067 in.
Z18 0.230 in. x 0.067 in.
Z19, Z20 0.490 in. x 0.050 in.
Z21, Z22 0.160 in. x 0.285 in.
s
ATC chip capacitor:
C1, C2, C21, C22: 10 pF
C7, C14, C23, C30, C41, C42: 8.2 pF
C12, C13: 1000 pF.
s
Kemet tantalum capacitor:
C27, C34: 10 F, 35 V T491D
C4, C9, C37, C38: 1 F, 50 V T491C.
s
Kemet chip capacitor:
C5, C10, C18, C26, C33: 0.1 F.
s
Sprague tantalum surface-mount chip capacitor:
C3, C8, C28, C29, C35, C36: 22 F, 35 V.
s
Vitramon 1206 capacitor: C5, C12: 22000 pF.
s
1206 size chip resistor:
R1, R4: 4.7 k
; R2, R5 560 k, R3, R6: 1.02 k.
s
Fair-Rite ferrite bead: FB1, FB2: 2743019447.
s
Taconic ORCER RF-35: board material,
1 oz. copper, 30 mil thickness,
εr = 3.5.
DUT
R1
C3
R3
Z9
Z1
Z2
C23
RF INPUT
VGG
VDD
C12
FB1
C7
Z3
C1
Z5
Z4
C2
Z6
Z8
Z7
Z10
Z16
C22
Z14
Z12
Z15
C21
Z13
Z11
Z18
Z17
RF OUTPUT
C24 C25 C26
C27
+
C30
VDD
C33 C38 C34 C35
++
Z20
Z19
1A
1B
3
2A
2B
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
R2
C4
C5
C6
R4
C8
R6
VGS
C13
FB2
C14
R5
C9
C10
C11
C37
C28
+
C29
+
C36
+
C31 C32
C41
C42
Z22
Z21
R3
R2
C1
C7 C41
C5
R1
C4
FB1
C6 C12
C34
C30
C33
C32
C31
C38
C22
C8
R5
R4
C11
C10
C9
C13
C14
R6 FB2
C42
C2
C3
C36
C35
C27
C21
C25
C24
C37
C23
C26
C29
C28
相关PDF资料
PDF描述
AGR21045EF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR21125EU S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR21125EF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR26125EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR26125EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
AGR19K180EF 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
AGR21030EF 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
AGR21045EF 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
AGR21060E 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21060EF 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray