- 您现在的位置：买卖IC网 > PDF目录48363 > AGR19180EU (LSI CORP) 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | AGR19180EU |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 9/9页 |
| 文件大小： | 230K |
| 代理商： | AGR19180EU |
Copyright 2003 Agere Systems Inc.
All Rights Reserved
July 2003
DS02-377RFPP
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere, Agere Systems, and the Agere logo are trademarks of Agere Systems Inc.
Fair-Rite is a registered trademark of Fair-Rite Products Corporation.
ATC is a registered trademark of American Technical Ceramics Corp.
Kemet is a registered trademark of KRC Trade Corporation.
Sprague is a registered trademark of Sprague Electric Company Corporation.
Vitramon is a registered trademark Vitramon Incorporated.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET:
http://www.agere.com
E-MAIL:
docmaster@agere.com
N. AMERICA:
Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106)
ASIA:
Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000, FAX (852) 3129-2020
CHINA: (86) 21-5047-1212 (Shanghai), (86) 755-25881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE:
Tel. (44) 1344 296 400
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
July 2003
AGR19180E
Preliminary Data Sheet
Ordering Information
Device Code
Package
Availability
Comcode
AGR19180E
AGR19180EU (surface-mount)
Tape and Reel
700047717
AGR19180EF (flanged)
Tray
700047716
相关PDF资料 |
PDF描述 |
|---|---|
| AGR21045EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21125EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21125EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26125EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26125EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19K180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21030EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21045EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。