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参数资料
| 型号： | AGR19180EU |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 7/9页 |
| 文件大小： | 230K |
| 代理商： | AGR19180EU |
Agere Systems Inc.
7
Preliminary Data Sheet
AGR19180E
July 2003
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Figure 8. Two-Carrier N-CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power
Figure 9. N-CDMA ACPR, Power Gain, Drain Efficiency versus Output Power
0
5
10
15
20
25
30
35
40
45
50
020
40
60
80
100
Pout, OUTPUT POWER (WATTS) Avg.
G
p
s,
P
O
W
E
R
G
A
IN
(
d
Bm
),
E
F
ICI
E
N
CY
(
%
)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
IR
L
,R
E
T
U
R
N
L
O
S
(d
B
),
IM
3
(
d
B
c
),
A
C
P
R
(d
B
c
)
Gps
ACPR
IM3
IRL
Efficiency
Vdd = 28 Vdc, Idq = 1600 mA
f 1 = 1958.75 MHz, f2 = 1961.25 MHz
2-Carrier N-CDMA
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier.
9.72 dB Peak/Avg. Ratio @ 0.01% Probability (CCDF)
Channel Spacing (Bandwidth)
ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz)
0
5
10
15
20
25
30
35
40
45
50
0
20
40
60
80
100
Pout, OUTPUT POWER (WATTS), AVG.
GP
S
,P
O
W
E
R
GA
IN
,EF
F
IC
IE
N
C
Y
(
%
)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
AD
JA
C
E
N
T
C
HAN
NE
L
P
O
W
E
R
A
T
IO
(
d
B
c
)
Gps
Vdd = 28 Vdc, Idq = 1600 mA
f = 1990 MHz Bandwidth = 1.2288 MHz
Channel Spacing ( Channel Bandwidth)
885 kHz (30 kHz), 1.25 MHz (12.5 kHz)
2.25 MHz (1MHz)
CDMA 9 Channel Forward
Pilot: 0, Paging: 1, Traffic: 8-13, Sinc: 32
Efficiency
885 kHz (30 kHz)
1.25 MHz (12.5 kHz)
2.25 MHz ( 1MHz)
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| AGR21060EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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