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参数资料
| 型号： | AGR21045EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/9页 |
| 文件大小： | 390K |
| 代理商： | AGR21045EF |
Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21045EF
A. Schematic
Parts List:
Microstrip line: Z1 0.780 in. x 0.066 in.; Z2 0.225 in. x 0.090 in.; Z3 0.360 in. x 0.090 in.; Z4 0.320 in. x 0.520 in.; Z5 0.050 in. x 0.430 in.;
Z6 0.335 in. x 0.330 in.; Z7 0.215 in. x 0.330 in.; Z8 0.450 in. x 0.066 in.; Z9 0.685 in. x 0.066 in.; Z10 0.050 x 0.715 in.
ATC chip capacitor: C1, C5: 8.2 pF 100B8R2JW500X; C2, C6 6.8 pF 100B6R8JW500X.
Kemet capacitor: C8 0.01 F C1206104K5RAC7800; C9 0.1 F GRM40X7R103K100AL.
Vitramon 1206 capacitor: C3, C7: 22,000 pF.
Sprague tantalum capacitor: C4, C10: 22 F, 35 V.
Fair-Rite ferrite bead: FB1 2743019447.
1206 size chip resistor: R1 12 .
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
B. Component Layout
Figure 2. AGR21045EF Test Circuit
DUT
R1
C4
+
C1
Z2
Z1
C5
Z9
RF INPUT
VGG
VDD
RF OUTPUT
Z6
Z5
FB1
C3
C2
C8
3
1
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
C6 C7
C10
+
C9
Z3
Z4
Z10
Z8
Z7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR21060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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