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参数资料
| 型号： | AGR21045EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 7/9页 |
| 文件大小： | 390K |
| 代理商： | AGR21045EF |
Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Figure 8. Broadband Performance
Figure 9. Spectral Plot
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
2100
2110
2120
2130
2140
2150
2160
2170
2180
FREQUENCY (MHz)Z
GA
IN
(d
B)
Z
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
EF
F
(%
),
RL
(d
B)
,I
M
D3
(d
Bc
),
AC
PR
(d
Bc
)Z
2 CARRIER W-CDMA 3GPP,
PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF
10 MHz SPACING, 3.84 MHz CBW,
POUT = 10 W, VDD = 28 V, IDQ = 400 mA
EFFICIENCY
GAIN
RL
IMD3
ACPR
IMD3
ACPR
CENTER 2.140 GHz
SPAN 50 MHz
-45
-40
-35
-30
-25
-20
-15
-10
-5
-0
+5
2 CARRIER W-CDMA
3GPP
PEAK-TO-AVG = 8.5 dB
@ 0.01% CCDF
10 MHz SPACING
3.84 MHz CBW
POUT = 10 W
VDD = 28 V
IDQ = 400 mA
F2
F1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR21060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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