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参数资料
| 型号： | AGR21045EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 6/9页 |
| 文件大小： | 390K |
| 代理商： | AGR21045EF |
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21045EF
Data Sheet
Typical Performance Characteristics (continued)
Figure 6. IMD vs. Tone Spacing
Figure 7. Gain, Efficiency, IMD3, and ACPR vs. Output Power
-60.0
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.1
1
10
100
TWO-TONE SPACING (MHz)Z
IM
D
(d
Bc
)Z
IM7
IM5
VDD = 28 V, POUT = 45 W PEP, Fo = 2140 MHz
IM3
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
0.00
5.00
10.00
15.00
20.00
25.00
OUTPUT POWER (WATTS-AVERAGE)Z
GA
IN
(d
B)
Z
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
EF
F
(%
),
IM
D3
(d
Bc
),
AC
PR
(d
Bc
)Z
2 CARRIER W-CDMA 3GPP,
PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF
10 MHz SPACING, 3.84 MHz CBW,
FC = 2140 MHz, VDD = 28 V, IDQ = 400 mA
DRAIN EFFICIENCY
GAIN
IMD3
ACPR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR21060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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