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参数资料
| 型号： | AH115-S8 |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | PLASTIC, SMT, MS-012, SOIC-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 638K |
| 代理商： | AH115-S8 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 2 of 7
October 2005
AH115 / ECP050G
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Typical Device Data
S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 °C T = 25 °C, calibrated to device leads)
0
0.5
1
1.5
2
2.5
Frequency (GHz)
Gain and Maximum Stable Gain
0
5
10
15
20
25
30
35
Ga
in
(
d
B
)
DB(GMax)
DB(|S[2,1]|)
0
1.0
-1.0
10.0
-1
0.
0
5.0
5.
0
-5
.0
2.0
2
.
0
-
2
.
0
3.0
3.
0
-3
.0
4.0
4.
0
-4
.0
0.2
0.
2
-0
.2
0.4
0
.
4
-
0
.
4
0.6
0
.
6
-
0
.
6
0.8
0
.
8
-
0
.
8
S11
Swp Max
5.05GHz
Swp Min
0.05GHz
0
1.0
-1.0
10.0
-1
0.
0
5.0
5.
0
-5
.0
2.0
2
.
0
-
2
.
0
3.0
3.
0
-3
.0
4.0
4.
0
-4
.0
0.2
0.
2
-0
.2
0.4
0.
4
-0
.4
0.6
0
.
6
-
0
.
6
0.8
0
.
8
-
0
.
8
S22
Sw p Max
5.05GHz
Sw p Min
0.05GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-2.11
-172.90
25.10
133.84
-36.03
31.44
-2.06
-105.55
100
-1.59
-178.94
21.15
126.67
-35.22
15.04
-2.73
-138.75
200
-1.51
173.71
17.75
124.19
-34.29
7.30
-2.80
-160.44
400
-1.45
163.84
15.23
111.50
-34.45
-2.16
-2.73
-174.00
600
-1.58
153.68
13.69
98.94
-33.58
-2.99
-1.96
-179.13
800
-1.78
144.31
12.77
84.57
-32.84
-12.80
-1.68
172.00
1000
-1.96
134.21
11.94
69.70
-32.77
-18.76
-1.85
166.98
1200
-2.46
123.44
11.36
55.57
-31.79
-30.73
-2.14
164.05
1400
-3.30
111.21
11.17
40.93
-31.12
-45.14
-2.30
163.07
1600
-4.70
92.57
11.39
22.80
-30.30
-61.92
-2.52
164.84
1800
-8.15
78.58
11.64
1.64
-29.47
-83.99
-2.43
164.25
2000
-19.01
93.29
11.51
-25.24
-29.31
-112.79
-1.84
162.38
2200
-9.59
177.56
10.35
-55.97
-30.51
-150.45
-1.22
155.68
2400
-4.09
159.30
7.87
-83.78
-32.59
177.62
-1.06
147.58
2600
-1.99
141.65
4.95
-105.90
-33.96
137.14
-1.07
139.74
2800
-1.12
127.57
1.97
-122.86
-34.68
109.27
-1.19
132.15
3000
-0.72
116.11
-0.88
-136.93
-35.64
81.83
-1.44
125.05
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
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相关代理商/技术参数 |
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| AH115-S8G | 功能描述:射频放大器 1800-2300MHz 14dB Gain@1960MHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AH115-S8-G | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER 制造商:TriQuint Semiconductor 功能描述:RF Amp Chip Single GP 2.3GHz 8-Pin SOIC |
| AH115-S8PCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH115-S8PCB2140 | 功能描述:射频开发工具 2140MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
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