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参数资料
| 型号： | AH115-S8 |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | PLASTIC, SMT, MS-012, SOIC-8 |
| 文件页数： | 3/7页 |
| 文件大小： | 638K |
| 代理商： | AH115-S8 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 3 of 7
October 2005
AH115 / ECP050G
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
1960 MHz Application Circuit (AH115-S8PCB1960)
Typical RF Performance at 25
°C
Frequency
1960 MHz
S21 – Gain
14.3 dB
S11 – Input Return Loss
-12 dB
S22 – Output Return Loss
-8 dB
Output P1dB
+28.3 dBm
Output IP3
(+11 dBm / tone, 1 MHz spacing)
+44 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
+22.5 dBm
Noise Figure
5 dB
Device / Supply Voltage
+5 V
Quiescent Current
250 mA
S21 vs. Frequency
6
8
10
12
14
16
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
S
21
(
d
B
)
+25°C
+85°C
-40°C
S11 vs. Freqency
-25
-20
-15
-10
-5
0
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
S
11
(dB
)
+25°C
85°C
-40°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
S2
2
(dB
)
+25°C
+85°C
-40°C
Noise Figure vs. Frequency
0
1
2
3
4
5
6
7
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
NF
(
d
B)
+25°C
+85°C
-40°C
P1 dB vs. Frequency
24
25
26
27
28
29
30
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
P1
d
B
(
d
B
m
)
+25°C
+85°C
-40°C
ACPR vs. Channel Power
IS-95, 9 ch,Fw d, ±885 KHz offset, 30 KHz Meas BW, 1960 MHz
-70
-65
-60
-55
-50
-45
-40
15
16
17
18
19
20
21
22
23
24
Output Channel Power (dBm)
AC
P
R
(dB
c
)
+25°C
+85°C
-40°C
OIP3 vs. Output Power
freq=1960, 1961 MHz,+ 25°C
36
38
40
42
44
46
8
101214
161820
Output Power (dBm)
OI
P
3
(
d
B
m
)
OIP3 vs. Frequency
+25°C, +11 dBm / tone
36
38
40
42
44
46
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
OI
P
3
(
d
B
m
)
OIP3 vs. Temperature
freq=1960,1961 MHz, +11 dBm / tone
36
38
40
42
44
46
-40
-15
10
35
60
85
Temperature (°C)
OI
P
3
(
d
B
m
)
相关PDF资料 |
PDF描述 |
|---|---|
| AH115-S8 | 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AH115 | 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AH115 | 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AH116-S8G | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AH116-S8G | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AH115-S8G | 功能描述:射频放大器 1800-2300MHz 14dB Gain@1960MHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AH115-S8-G | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER 制造商:TriQuint Semiconductor 功能描述:RF Amp Chip Single GP 2.3GHz 8-Pin SOIC |
| AH115-S8PCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH115-S8PCB2140 | 功能描述:射频开发工具 2140MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH115-S8TRG | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
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