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参数资料
| 型号： | ALD110808PCL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 10.6V QUAD 16PDIP |
| 标准包装： | 25 |
| 系列： | EPAD® |
| FET 型： | 4 N 通道（半桥） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 10.6V |
| 电流 - 连续漏极(Id) @ 25° C： | 12mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 4.8V |
| Id 时的 Vgs(th)（最大）： | 820mV @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 通孔 |
| 封装/外壳： | 16-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 16-PDIP |
| 包装： | 管件 |
| 其它名称： | 1014-1026 |
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL package 0 ° C to +70 ° C
Storage temperature range
Lead temperature, 10 seconds
-65 ° C to +150 ° C
+260 ° C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25 ° C unless otherwise specified
ALD110808A/ALD110908A
ALD110808/ALD110908
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
Min
0.78
Typ
0.80
Max
0.82
Min
0.78
Typ
0.80
Max
0.82
Unit
V
Test Conditions
IDS =1 μ A, VDS = 0.1V
Offset Voltage
VOS
1
2
3
10
mV
VGS(th)1-VGS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
TCVOS
TCVGS(th)
5
-1.7
5
-1.7
μ V/ ° C
mV/ ° C
VDS1 = VDS2
ID = 1 μ A, VDS = 0.1V
0.0
+1.6
0.0
+1.6
ID = 20 μ A, VDS = 0.1V
ID = 40 μ A, VDS = 0.1V
On Drain Current
IDS (ON)
12.0
12.0
mA
VGS = +10.3V, VDS = +5V
3.0
3.0
VGS = +4.8V, VDS = +5V
Forward Transconductance
GFS
1.4
1.4
mmho
VGS = +4.8V
VDS = +9.8V
Transconductance Mismatch
? GFS
1.8
1.8
%
Output Conductance
GOS
68
68
μ mho
VGS = +4.8V
VDS = +9.8V
Drain Source On Resistance
RDS (ON)
500
500
?
VDS = +0.1V
VGS = +4.8V
Drain Source On Resistance
? RDS (ON)
0.5
0.5
%
Mismatch
Drain Source Breakdown
Voltage
BVDSX
10
10
V
IDS = 1.0 μ A
V-= VGS = -1.0V
Drain Source Leakage Current 1
IDS (OFF)
10
400
10
400
pA
VGS = -0.2V, VDS =+5V
V- = -5V
4
4
nA
TA = 125 ° C
Gate Leakage Current 1
IGSS
3
200
3
200
pA
VDS = 0V VGS = +5V
1
1
nA
TA =125 ° C
Input Capacitance
Transfer Reverse Capacitance
CISS
CRSS
2.5
0.1
2.5
0.1
pF
pF
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
ton
toff
10
10
60
10
10
60
ns
ns
dB
V+ = 5V RL= 5K ?
V+ = 5V RL= 5K ?
f = 100KHz
Notes:
1
Consists of junction leakage currents
ALD110808/ALD110808A/ALD110908/ALD110908A
Advanced Linear Devices
2 of 11
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| ALD110808SC | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
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| ALD110814PC | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
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