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参数资料
| 型号： | AM29F017D |
| 厂商： | Spansion Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位）的CMOS 5.0伏只，统一部门快闪记忆体 |
| 文件页数： | 12/44页 |
| 文件大小： | 1021K |
| 代理商： | AM29F017D |
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This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21195
Rev: E Amendment/+2
Issue Date: March 23, 2001
Am29F017D
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Optimized for memory card applications
— Backwards-compatible with Am29F016C and
Am29F017B
s 5.0 V
± 10%, single power supply operation
— Minimizes system level power requirements
s Manufactured on 0.23 m process technology
s High performance
— Access times as fast as 70 ns
s Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 A typical standby current (standard access
time to active mode)
s Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
s Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
s Minimum 1,000,000 program/erase cycles per
sector guaranteed
s 20-year data retention at 125
°C
— Reliable operation for the life of the system
s Package options
— 40-pin TSOP
— 48-pin TSOP
s Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
s Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
s Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F017D-120 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F032B-150SE | 4M X 8 FLASH 5V PROM, 150 ns, PDSO44 |
| AM29F032B-75FC | 4M X 8 FLASH 5V PROM, 70 ns, PDSO40 |
| AM29F080-120SEB | 1M X 8 FLASH 5V PROM, 120 ns, PDSO44 |
| AM29F080-150EEB | 1M X 8 FLASH 5V PROM, 150 ns, PDSO40 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F017D-120EC | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS 48TSOP - Trays |
| AM29F017D-70FI | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 70NS 48TSOP - Trays |
| am29f017d-90fc/t | 制造商:Advanced Micro Devices 功能描述: |
| AM29F032B-120ED | 制造商:Spansion 功能描述: |
| AM29F032B75ED | 制造商:Advanced Micro Devices 功能描述: |
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