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参数资料
| 型号： | AM29F017D |
| 厂商： | Spansion Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位）的CMOS 5.0伏只，统一部门快闪记忆体 |
| 文件页数： | 13/44页 |
| 文件大小： | 1021K |
| 代理商： | AM29F017D |
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Am29F017D
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The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 3.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F017D-120 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F032B-150SE | 4M X 8 FLASH 5V PROM, 150 ns, PDSO44 |
| AM29F032B-75FC | 4M X 8 FLASH 5V PROM, 70 ns, PDSO40 |
| AM29F080-120SEB | 1M X 8 FLASH 5V PROM, 120 ns, PDSO44 |
| AM29F080-150EEB | 1M X 8 FLASH 5V PROM, 150 ns, PDSO40 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F017D-120EC | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS 48TSOP - Trays |
| AM29F017D-70FI | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 70NS 48TSOP - Trays |
| am29f017d-90fc/t | 制造商:Advanced Micro Devices 功能描述: |
| AM29F032B-120ED | 制造商:Spansion 功能描述: |
| AM29F032B75ED | 制造商:Advanced Micro Devices 功能描述: |
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